RAAAM Memory Technologies Appoints Semiconductor Industry Veteran Hong Hao as Strategic Advisor to Accelerate U.S. Market Expansion
RAAAM Memory Technologies, a semiconductor startup pioneering ultra-high-density, low-power on-chip memory solutions, today announced the appointment of semiconductor industry executive Hong Hao as Strategic Advisor. In this advisory capacity, Mr. Hao will work closely with RAAAM’s executive leadership team to guide corporate growth strategies and accelerate commercial engagement with tier-one customers and semiconductor ecosystem partners across the United States.
Mr. Hao brings more than three decades of global leadership experience spanning semiconductor product development, silicon foundry commercialization, and international business expansion. Most recently, he served as Corporate Vice President and General Manager of Worldwide Business Development and Sales at Intel Foundry, where he directed overarching commercial strategies and led global customer engagement execution.
Prior to his tenure at Intel, Mr. Hao served as Senior Vice President and Head of Samsung’s North America Foundry Business. In that role, he oversaw commercial strategy, marketing, customer engagement, technical support, and the expansion of the regional foundry ecosystem. Earlier in his career at Samsung System LSI, he directed engineering execution for high-performance, high-efficiency ARM-based System-on-Chip (SoC) architectures targeted at mobile and data center applications.
Throughout his multi-decade career, Mr. Hao has established an extensive track record of cultivating key customer partnerships, scaling foundry ecosystems, and directing complex SoC and ASIC product programs. His specialized domain expertise in foundry operations, semiconductor intellectual property (IP) integration, and strategic partner enablement will serve as a vital asset as RAAAM expands its commercial presence and scales its market footprint.
“Hong Hao is a highly respected industry veteran with a successful track record in scaling foundry ecosystems and driving commercial growth,” said Robert Giterman, Co-Founder and Chief Executive Officer of RAAAM Memory Technologies. “As chip designers face severe SRAM scaling and power limitations, RAAAM’s GCRAM technology provides a critical, cost-effective breakthrough. Hong’s strategic guidance will be invaluable as we expand our engagement with major US semiconductor companies and ecosystem partners.”
The appointment comes at a critical juncture for the semiconductor industry, where conventional static random-access memory (SRAM) faces mounting physical scaling barriers and escalating leakage power penalties in advanced process nodes. RAAAM’s patented Gain-Cell RAM (GCRAM) technology delivers a drop-in replacement for high-density SRAM, enabling semiconductor design teams to integrate substantially higher memory density within standard CMOS fabrication flows without requiring specialized process modifications.
“RAAAM’s innovative GCRAM technology addresses one of the most pressing bottlenecks in modern SoC design, achieving ultra-high memory density and power efficiency using standard CMOS processes,” said Hong Hao. “I am excited to advise RAAAM at this pivotal stage of growth. The team has engineered a genuinely disruptive solution, and I look forward to helping them extend their footprint and deepen relationships within the US semiconductor community and beyond.”
Through this strategic appointment, RAAAM reinforces its commitment to equipping semiconductor manufacturers and fabless design houses with next-generation embedded memory technology. By reducing silicon footprint, curtailing operational and static power dissipation, and lowering overall manufacturing costs, the company empowers chipmakers to advance computing performance across mobile, artificial intelligence, edge, and cloud processing architectures.
About RAAAM Memory Technologies Ltd.
RAAAM Memory Technologies has developed the most cost-effective on-chip memory technology in the semiconductor industry, offering up to 50% silicon area savings and up to 3x power reduction compared to standard high-density SRAM. Its patented GCRAM technology acts as a drop-in SRAM alternative for System-on-Chip (SoC) designs and is fully compatible with standard CMOS processes, enabling semiconductor engineers to integrate significantly higher memory capacity in smaller die footprints while drastically curtailing power consumption.
For more information, please visit: https://raaam-tech.com